2013 R&D 100 Winner
Devices based on gallium arsenide (GaAs) have numerous applications, such as photovoltaics, because it is a wide bandgap semiconductor and can be used under extreme conditions—high-temperature, high-power and high-radiation environments—where conventional silicon-based devices can’t adequately perform. However, GaAs wafers have been expensive, inflexible and limited to 6 in in diameter. TexMat LLC and TapeSolar Inc. have introduced a new type of GaAs wafer that is flexible and can be produced in sizes measuring in meters, not inches. Large-Area, Flexible, Single-Crystal-Like, GaAs Substrates for epitaxial electronic and electrical devices are fabricated in a single-crystal-like, flexible metal/alloy template in which all three crystallographic axes are aligned within a few degrees at all points. Mechanical rolling, annealing and heteroepitaxial deposition of buffer layers complete the process.

GaAs substrates

TexMat LLC

Development Team

The Large-Area, Flexible, Single-Crystal-Like, GaAs Substrates For Epitaxial Electronic & Electrical Devices Development Team
Amit Goyal, Principal Developer, TexMat LLC
Kyunghun Kim, Principal Developer, TapeSolar
Gokul Radhakrishnan, Principal Developer, TapeSolar
Ravi Droopad, TapeSolar