2013 R&D 100 Winner
Silicon is the material of choice for most semiconductor applications, but experts have also long recognized an end point for silicon-based technology because of high-temperature degradation and limited electron mobility at increasingly small feature sizes. Diamond is among the next-generation wide band gap (WBG) semiconductor platforms under investigation. However, its superior performance comes at great cost. Argonne National Laboratory and AKHAN Technologies Inc. have developed an alternative called the Miraj Diamond Platform. A complementary metal oxide semiconductor (CMOS) compatible n-type nanocrystalline diamond-based material, Miraj Diamond is made possible by a new approach to n-type doping while simultaneously allowing integration with existing CMOS platforms through low-temperature deposition of nanocrystalline diamond thin films at 400 C. The result of these efforts is a cost-effective performer with the highest thermal conductivity and electrical breakdown field of all silicon replacement candidates.

CMOS compatible n-type nanocrystalline diamond-based material

Argonne National Laboratory
AKHAN Technologies Inc.
Argonne National Laboratory, Center for Nanoscale Materials

Development Team

Miraj Diamond Platform team (l-r): Adam Khan and Anirudha Sumant.


The Miraj Diamond Platform Development Team
Anirudha V. Sumant, Principal Developer, Argonne National Laboratory
Adam Khan, Principal Developer, AKHAN Technologies Inc.