A team led by Rice University chemist James Tour has built a 1-kilobit rewritable device with diodes that eliminate data-corrupting crosstalk. This chip, which uses cheap, plentiful silicon oxide to store data, shows it should be possible to surpass the limitations of flash memory in packing density, energy consumption per bit and switching speed.
An unlikely material, cubic boron arsenide, could deliver an extraordinarily high thermal conductivity—on par with the industry standard set by costly diamond. The discovery that the chemical compound of boron and arsenic could rival diamond surprised the team of theoretical physicists. But a new theoretical approach allowed the team to unlock the secret to boron arsenide's potentially extraordinary ability to conduct heat.
In the constant push for smaller transistors, researchers have been investigating oxides with higher K, or dielectric constant, values. Materials such as germanium, hafnium, and titanium are being investigated for this role, but many prototypes leak electrons. At the National Synchrotron Light Source, x-rays are being used to probe the electronic behavior of a germanium-based transistor structure that could offer a solution.
Researchers in Switzerland have designed prototype for an image sensor based on the semiconducting properties of molybdenite. Their sensor only has a single pixel, but it needs five times less light to trigger a charge transfer than the silicon-based sensors that are currently available.
Through-focus scanning optical microscopy, a technique developed several years ago at NIST for improving optical microscopes, now has been applied to monitoring the next generation of computer chip circuit components, potentially providing the semiconductor industry with a crucial tool for improving chips for the next decade or more.
The world’s most advanced extreme-ultraviolet microscope is about to go online at Lawrence Berkeley National Laboratory, and the queue of semiconductor companies waiting to use it already stretches out the door. The much-anticipated SHARP microscope will provide semiconductor companies with the means to push their chip-making technology to new levels of miniaturization and complexity.
At the IEEE Photovoltaic Specialists Conference in Tampa, Fla. last week, National Renewable Energy Laboratory scientist Myles Steiner announced a world record of 31.1% conversion efficiency for a two-junction solar cell under one sun of illumination. The achievement edges the previous record of 30.8% by Alta Devices.
Silicon can accept ten times more lithium than the graphite used in the electrodes in lithium-ion batteries, but silicon also expands, shortening electrode life. Looking for an alternative to pure silicon, scientists in Germany have now synthesized a novel framework structure consisting of boron and silicon, which could serve as electrode material.
Researchers in Munich, Germany, have recently published work that describes experiments in which inexpensive semiconductor lasers have produced high-energy light pulses as short as 60 picoseconds without the drawbacks of previous approaches in terms of power consumption and device size. They say the new technique, based on the use of a new Fourier domain mode-locked laser, could open the door to subpicosecond pulses.
High-performance thermoelectric materials that convert waste heat to electricity could one day be a source of more sustainable power. But they need to be a lot more efficient before they could be effective on a broad scale in places like power plants or military bases, researchers say. A University of Michigan researcher has taken a step toward that goal.
Leaders of the National Science Foundation (NSF) and the Semiconductor Research Corporation (SRC), the world's leading university-research consortium for semiconductors and related technologies, this week announced 18 new projects funded through a joint initiative to address research challenges in the design of failure-resistant circuits and systems.
Researchers at North Carolina State University have developed a new technique for creating high-quality semiconductor thin films at the atomic scale—meaning the films are only one atom thick. The technique can be used to create these thin films on a large scale, sufficient to coat wafers that are two inches wide, or larger.
From the high-resolution glow of flat screen televisions to light bulbs that last for years, light-emitting diodes (LEDs) continue to transform technology. Their full potential, however, remains untapped. A contentious controversy surrounds the high intensity of indium gallium nitride, with experts split on whether or not indium-rich clusters within the material provide the LED's remarkable efficiency.
From powerful computers to super-sensitive medical and environmental detectors that are faster, smaller, and use less energy—yes, we want them, but how do we get them? In research that is helping to lay the groundwork for the electronics of the future, University of Delaware scientists have confirmed the presence of a magnetic field generated by electrons which scientists had theorized existed, but that had never been proven until now.
University of Utah metallurgists have used an old microwave oven to produce a nanocrystal semiconductor rapidly using cheap, abundant, and less toxic metals than other semiconductors. X-ray crystallography, electron microscopy, and atomic spectroscopy all helped confirm that the CZTS (copper, zinc, tin, and sulfur) semiconductor was suitable for use in a solar cell.
Thermoelectric materials can be used to turn waste heat into electricity or to provide refrigeration without any liquid coolants, and a research team from the University of Michigan has found a way to nearly double the efficiency of a particular class of them that's made with organic semiconductors.
An international team of researchers has recently succeeded in both initializing and reading nuclear spins—which are relevant to qubits for quantum computers—at room temperature. With the help of a spin filter developed in 2009, the team has produced a flow of free electrons with a given spin in a material.
Wake Forest University's Organic Electronics group has developed an organic semiconductor “spray paint” that can be applied to large surface areas without losing electric conductivity. The new spray-deposition method has the advantages of drop casting, spin coating, and prior spray-on techniques: It can applied to large surfaces of any medium, retaining electrical performance.
A team of electrical engineers from Columbia University has generated a record amount of power output—by a power of five—using silicon-based nanoscale CMOS technology for millimeter-wave power amplifiers. Power amplifiers are used in communications and sensor systems to boost power levels for reliable transmission of signals over long distances as required by the given application.
Unlike the building blocks of conventional hard disk drives and memories, resistive memory cells (ReRAM) are active electrochemical components. In these cells, ions generate voltage on electrodes in a similar manner to a battery. Researchers in Europe have conducted an extensive study of ReRAMs, also described as memristors, and have found previously undiscovered sources of voltage in these devices.
When a team of University of Illinois engineers set out to grow nanowires of a compound semiconductor on top of a sheet of graphene, they did not expect to discover a new paradigm of epitaxy. The self-assembled wires have a core of one composition and an outer layer of another, a desired trait for many advanced electronics applications.
By introducing high tensile strain, a research group in Switzerland has rendered germanium, which is normally unsuitable for lasers, capable of emitting 25 times more photons than in its relaxed state. This change alters the optical properties of the material and is enough to allow the construction of lasers from this material. This is valuable because germanium is highly compatible with silicon.
A local power failure in Ohio ten years ago caused a series of cascading power failures that resulted in a massive blackout. Such blackouts could be prevented in the future, thanks to a new piece of equipment developed by engineering researchers at the University of Arkansas. The device regulates or limits the amount of excess current that moves through the power grid when a surge occurs.
Researchers are developing a new type of semiconductor technology for future computers and electronics based on "2D nanocrystals" layered in sheets less than a nanometer thick that could replace today's transistors. The layered structure is made of a material called molybdenum disulfide, which belongs to a new class of semiconductors—metal di-chalogenides—emerging as potential candidates to replace today's CMOS technology.
The same material that formed the first primitive transistors more than 60 years ago can be modified in a new way to advance future electronics, according to a new study. Chemists at The Ohio State University have developed the technology for making a one-atom-thick sheet of germanium, and found that it conducts electrons more than ten times faster than silicon and five times faster than conventional germanium.