Germanium monosulfide (GeS) is emerging as one of the most important class "IV–VI" semiconductor materials with potential in optoelectronics applications for telecommunications and computing. Adding a new element of control to preparation of this material, researchers in China have found a convenient way to selectively prepare GeS nanostructures, including nanosheets and nanowires, that are more active than their bulk counterparts
Until now, it has been hard to couple light...
Commercial demand is driving high-tech research...
Existing transistors act as electronic switches,...
Organic solar cells are a compelling thin-film photovoltaic technology in part because of their compatibility with flexible substrates and tunable absorption window. Belgium-based chipmaker imec has set a new conversion efficiency record of 8.4% for this type of cell by developing fullerene-free acceptor materials and a new multilayer semiconductor device structure.
Light-emitting diodes (LEDs) are durable and save energy. Now, researchers have found a way to make LED lamps even more compact while supplying more light than commercially available models. The key to this advance are a new type of transistors made of the semiconductor material gallium nitride.
Researchers at IBM have set a new record for data transmission over a multimode optical fiber, a type of cable that is typically used to connect nearby computers within a single building or on a campus. The data was sent at a rate of 64 Gb/s over a cable 57-m long using a type of laser called a vertical-cavity surface-emitting laser. This rate is 2.5 times faster than the capabilities of today's typical commercial technology.
European scientists from both academia and industry have begun an ambitious new research project focused on an alternative approach to extend Moore's Law. The research project, coordinated IBM Research in Zurich and called COMPOSE³, is based on the use of new materials to replace today's silicon, and on taking an innovative design approach where transistors are stacked vertically, known as 3-D stacking.
Researchers at Tyndall National Institute in Ireland have produced the first ever atom-by-atom simulation of nanoscale film growth by atomic layer deposition (ALD), a thin-film technology used in the production of silicon chips. The accomplishment required the acquisition of the complete set of hundreds of ALD reactions at the quantum mechanical level.
Continuous miniaturization in microelectronics is nearing physical limits, so researchers are seeking new methods for device fabrication. One promising candidate is a DNA origami technique in which individual strands of the biomolecule self-assemble into arbitrarily-shaped nanostructures. A new simpler strategy combines DNA origami with self-organized pattern formation to do away with elaborate procedures for positioning DNA structures.
New research hints that nanodevices in microcircuits can protect themselves from heat generation through the transformation of nanotransistors into quantum states. The finding, demonstrated in nanoscale semiconductors devices, could boost computing power without large-scale changes to electronics.
Researchers in Ireland and Germany have discovered a novel solid state reaction which lets kesterite grains grow within a few seconds and at relatively low temperatures. The work points towards a new pathway for the fabrication of thin microcrystalline semiconductor films without the need of expensive vacuum technology.
Superconducting quantum interference devices (SQUIDs) are incredibly sensitive magnetic flux sensors which have been limited in their applications because of thermal challenges at ultralow temperatures. Researchers in the U.K. have succeeded in overcoming this difficulty by introducing a new type of nanoscale SQUID based on optimized proximity effect bilayers.
The goal of fabricating fixed-size one-dimensional silica structures and being able to precisely control the diameter during growth has long eluded scientists. Now, Oak Ridge National Laboratory researchers Panos Datskos and Jaswinder Sharma have demonstrated what they describe as the addressable local control of diameter of each segment of the silica rod.
Flickering façades, curved monitors, flashing clothing, fluorescent wallpaper, flexible solar cells—and all printable. This is no make-believe vision of the future; it will soon be possible using a new printing process for organic light-emitting diodes.
Belgian nanoelectronics research center Imec and JSR, a materials company based in Tokyo, Japan, announce that they have successfully used JSR’s innovative PA (Photo-patternable Adhesive) material for wafer-scale processing of lab-on-chip devices. Using this material, imec has processed microfluidic cell-sorter devices, merging microheaters and sensors with wafer-scale polymer microfluidics.
If consumer electronics companies are to be believed, someone on your holiday shopping list is just dying for a wristwatch that displays message alerts and weather updates. Samsung and Sony have them, Google and Apple are rumored to be developing them. But some experts say it's a product in search of a market, and an expensive one at that.
An industry-academic partnership has created two different optical components that can be fabricated within the same processes already used in industry to create today’s electronic microprocessors. The modulators, which are structures that detect electrical signals and translate them into optical waves, use light instead of electrical wires to communicate with transistors on a single chip.
A new method developed in Germany makes it possible to manufacture ultra-thin saw wires by placing diamond on carbon nanotubes. The new invention is designed to cut through silicon wafers with minimum kerf, or “sawdust”, loss that is the unavoidable result of current tools used in semiconductor wafer fabrication.
A study of the photovoltaic industries in the U.S. and China shows that China's dominance in solar panel manufacturing is not driven solely by cheaper labor and government support, but by larger-scale manufacturing and resulting supply-chain benefits. Researchers say a balance could be achieved through future innovations in crystalline solar cell technology.
A collaboration of scientists from the Univ. of Minnesota and the National Renewable Energy Laboratory have developed a new method to use an ionized gas, called nonthermal plasma, to produce silicon nanocrystals and cover their surfaces with a layer of chlorine atoms. This method allows production of stable silicon inks without organic ligand molecules and also greatly enhances conductivity.
Researchers in California have demonstrated that indium phosphide, a III-V compound, can be grown on thin sheets of metal foil in a process that is faster and cheaper than traditional methods, yet still comparable in optoelectronic characteristics. Indium phosphide is among the high-performance solar converter, but has been up to 10 times as expensive as silicon to integrate in photovoltaic cells.
Diffusion of sodium ions from the glass substrate is thought to be the primary cause of potential-induced degradation (PID) in crystalline silicon photovoltaic cells. A research institute and metals company in Japan have partnered to develop a thin film solution. The titanium oxide-based composite metal compound they have developed is inexpensive to produce and highly scalable.
Flexible electronics have a wide variety of possibilities, from bendable displays and batteries to medical implants that move with the body. Networks of spherical nanoparticles embedded in elastic materials may make the best stretchy conductors yet, engineering researchers at the Univ. of Michigan have discovered.
Researchers at Arizona State Univ. have successfully manufactured the world’s largest flexible color organic light emitting display prototype using advanced mixed oxide thin film transistors. Measuring 7.4 diagonal inches, the device was developed at ASU’s Flexible Display Center in conjunction with Army Research Labs scientists.
A team led by Rice University chemist James Tour has built a 1-kilobit rewritable device with diodes that eliminate data-corrupting crosstalk. This chip, which uses cheap, plentiful silicon oxide to store data, shows it should be possible to surpass the limitations of flash memory in packing density, energy consumption per bit and switching speed.
In the constant push for smaller transistors, researchers have been investigating oxides with higher K, or dielectric constant, values. Materials such as germanium, hafnium, and titanium are being investigated for this role, but many prototypes leak electrons. At the National Synchrotron Light Source, x-rays are being used to probe the electronic behavior of a germanium-based transistor structure that could offer a solution.
At the IEEE Photovoltaic Specialists Conference in Tampa, Fla. last week, National Renewable Energy Laboratory scientist Myles Steiner announced a world record of 31.1% conversion efficiency for a two-junction solar cell under one sun of illumination. The achievement edges the previous record of 30.8% by Alta Devices.
At this week’s International Image Sensor Workshop in Utah, Belgium’s imec and Holst Centre, in collaboration with Philips Research, will present a large-area fully-organic photodetector array fabricated on a flexible substrate. The imager is sensitive in the wavelength range suitable for x-ray imaging applications.
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