Semiconductors
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Mar 9 | New To Market
The new OSTAR Compact LED from OSRAM has been developed specifically for use in vehicle headlights. Despite drawing just 5 W, the device provides 300 lumens of power and meets ECE/SAE color binning requirements for use on motor vehicles.
Feb 12 | News
A team of chemists from the Univ. of New Hampshire has synthesized the first-ever stable derivative of nonacene, creating a compound that holds significant promise in the manufacture of flexible organic electronics such as large displays, solar cells and radio frequency identification tags.
Feb 9 | News
At this week’s International Solid State Circuit Conference, IMEC and Holst Centre report a 2.4 GHz/915 MHz wake-up receiver which consumes only 51 µW power. This record low power achievement could open the door to battery-less or energy-harvesting based radios for long-range RFID or wireless sensor nodes.
Feb 9 | News
A Princeton-led team of scientists has observed electrons in a semiconductor on the brink of the metal-insulator transition for the first time. Caught in the act, the electrons formed complex patterns resembling those seen in turbulent fluids, confirming some long-held predictions and providing new insights into how semiconductors can be turned into magnets.
Jan 11 | News
New experiments on a recently discovered class of iron-based superconductors suggest that the ability of their electrons to conduct electricity without resistance is directly connected with the magnetic properties of those electrons.
12/11/2009 | News
Earlier this week R&D Daily pointed readers to new discoveries about the quantume mechanical force that attracts objects when they are just nanometers apart. Now, Argonne Lab materials experts say they are working on ways to control this force. They say that harnessing this force will make nanoelectromechanical (NEMS) systems much more useful.
12/9/2009 | News
Earlier this week, the R&D Daily highlighted a transistor made from a single phosphorus atom, but a new gallium nitride device invented by a Cornell Univ. engineer may have better chance of replacing silicon in the near term. The key advantage? An electrical resistance 10 to 20 times lower than silicon-based power devices, and can handle 3 million volts per centimeter.
9/17/2009 | News
The Thomas Jefferson National Accelerator Facility marked a step forward in the field of advanced particle accelerator technology with the successful test of the first U.S.-built superconducting radiofrequency (SRF) niobium cavity to meet the exacting specifications of the proposed International Linear Collider (ILC).
9/16/2009 | News
Scientists in Germany have for the first time
made graphene visible on gallium arsenide, representing the successful
combination of two unique electronic materials. Previously, these efforts with
graphene have only been successful on silicon oxide. The gallium support layer
was designed as an anti-reflection surface, helping make the single-atom layer
visible under an optical microscope.
9/16/2009 | News
Kelvin probe force microscopes work much like atomic force
microscopes except that they also measure electrical conductivity. But until recent
breakthroughs by a doctoral student in Germany, it was not completely
understand what is measured by the microscope. The new interpretation of
results should greatly developers of nanoscale semiconductor constructs.