FEI has introduced its Helios NanoLab 450 F1 DualBeam system for semiconductor failure analysis.

The system features a new STEM (scanning transmission electron microscope) detector that provides improved contrast between materials. The system's new flip stage and rotating nanomanipulator support advanced preparation techniques for complex device architectures, such a finFETs and 3D memory structures.

The Helios NanoLab 450 F1 is the most recent addition to FEI's line of DualBeam systems. It combines a high-resolution SEM (scanning electron microscope) and FIB (focused ion beam) for high-quality imaging and fast, precise milling and deposition, and adds capabilities designed for semiconductor failure analysis applications. The STEM detector provides high resolution and better material contrast. The FlipStage 3 quickly flips the sample between thinning and STEM viewing positions and a new rotation axis permits viewing from either side of the section. The EasyLift nanomanipulator provides precise motorized sample manipulation, including rotation, to support automated lift-out and advanced preparation procedures, such as inverted thinning. The MultiChem gas injector system provides flexibility in gas-assisted milling and deposition, while cutting maintenance costs with pre-filled crucibles.

FEI, www.fei.com