A new line of high current power MOSFETs has been released by IXYS Corp. in versions ranging from 55V to 100V, utilizing IXYS’ unique MOSFET non-planar technology to provide high efficiency in power management circuits with ultra-low Rds and optimized intrinsic reverse diode.

These MOSFETs provide for very low conduction and switching losses, and are avalanche rated for hard-switching applications.

IXYS’ ISOPLUS packages provide high isolation capability (up to 2500V), improve creepage distance, and dramatically reduce total thermal resistance. Additionally, the ceramic alumina substrates used also dramatically enhance device reliability due to their superior thermal and power cycling. Kunze high performance phase change materials can be used to further enhance ISOPLUS package thermal performance.

IXYS Corp., www.ixys.com