Power electronics modules are the core components of all power electronics systems. The High-temperature Silicon Carbide (SiC) Power Module developed by Sandia National Laboratories, Albuquerque, N.M., and partners is the world’s first commercial module of its kind. The 50 kW (1200 V/150 A peak) silicon carbide power modules are rated up to 250°C junction temperature versus the 150ºC limit for silicon technology. The lead-free die attach technology is operational to temperatures in excess of 400ºC; future changes will extend the power module’s temperature of operation to temperatures in excess of 400°C. The module can withstand short circuit loads for more than 1 ms, which is more than 100 times the performance of silicon systems. The silicon carbide power transistors and integrated high-temperature silicon-on-insulator (HTSOI) gate driver reduce system electrical loss by less than 50%.
Sandia National Laboratories
Arkansas Power Electronics International, Inc., Fayetteville, Ark.
Univ. of Arkansas, Fayetteville, Ark.
Rohm Co., LTD, Kyoto, Japan
U.S. Department of Energy/Energy Storage Program, Washington, D.C.