2009 R&D 100 Winner
The production of copper seed layers for high-aspect-ratio through-silicon-via (TSV) metallization has been a major roadblock to adoption of 3-D packaging in the semiconductor industry. A 3-D integrated circuit package promises reduced size, cost, and power consumption while increasing both functionality and performance. But ionized physical vapor deposition (iPVD) processes have already reached their limitations in terms of producing continuous layers for TSVs with aspect ratios of 3:1 to 8:1. The eG ViaCoat, developed and brought to market by Alchimer S.A., Massy, France, was developed as a solution to this problem and is specifically designed for electrografting copper seed layers inside high density, high aspect ratio TSVs. It can produce conformal, ultra-thin, uniform, and adherent copper seed layers in the 50 to 500 nm range, even on resistive barriers. eG ViaCoat demonstrates continuous sidewall and bottom coverage even on highly scalloped TSV etch profiles, and at aggressive TSV aspect ratios. Reliable metallization of TSVs with aspect ratios of 17:1 is now possible, helping to make eG ViaCoat—using industry-standard electroplating equipment—an enabling technology of 3-D IC packaging.
Technology
Coating process
Developer
Alchimer S.A.
