2009 R&D 100 Winner
Historically, semiconductors have been fabricated using photolithographic and related technologies, which are predominantly oriented to two dimensions. Lasonix, a new technology from Los Alamos National Laboratory, Los Alamos, N.M., can be used to grow and fabricate semiconductor, metallic, and insulating structures in three dimensions while controlling their composition, doping levels, and crystal structure. The concept is based on a Laser-Weave in which inorganic fibers and textile are synthesized by focusing lasers onto a target in a chamber in the presence of certain gases. An adjustable nozzle sends in gases, or precursors—such as silicon, gallium arsenide, and silicon carbide—into the chamber either one at a time or in combination. The gases decompose at the laser-heated spots to produce solid fiber deposits. When the focused laser spots are drawn backward, the fibers follow, and long fibers are grown. Through the addition of trace quantities of other materials, the fibers can be doped to produce diodes, transistors, and conductive wires. By changing the gas composition, different materials can be grown on top of each other, forming heterojunctions between semiconductor layers.
The technology, which also reduces the potential for heat by creating conductive features within 3-D fibers of silicon or other semiconductors, should help enable the creation of high-density electronic packages and other complex 3-D structures.
Technology
Technology to grow and fabricate semiconductor
Developer
Los Alamos National Laboratory
